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We specialize in
the localization of advanced power semiconductors

  Founded in July 2017, Chengdu Semi-Future Technology Co., Ltd. (hereinafter referred to as "Semi-Future Technology") has been recognized as a Young Eagle Enterprise (innovative enterprise) of Chengdu Hi-tech Zone, Chengdu Integrated Circuit Design Enterprise, and National High-tech Enterprise, focusing on the localization of advanced power semiconductor devices.

The core technology team of Semi-Future Technology is composed of doctors from Tsinghua University and Chinese Academy of Sciences. We have been focusing on the research and development of power semiconductor devices for a long time, and deeply engaged in the technology and industrialization of IGBT chips for over 10 years. We have obtained (including the number of patents under registration) more than 30 patents on related technologies and successfully developed over 100 chips of different voltage levels and application scenarios, making Semi-Future Technology become one of the IGBT power semiconductor companies with the broadest product line coverage in China. Our chip products fully adopt trench + field-stop technology and have been applied in many market areas such as industrial inverter, special power supply, induction heating, new energy power generation and new energy vehicles.

Semi-Future Technology has a technical team of nearly 30 members, including Ph.D. and master's degree graduates from Tsinghua University, Chinese Academy of Sciences, Sichuan University and University of Electronic Science and Technology of China, forming an high-level team of IGBT chip R&D and industrialization. The team includes 5 doctors and 70% of the R&D personnel has master's degree, forming a backup system of R&D human resources. The device team's process technology accumulation comes from years of frontline work experience in wafer production lines. The team is not only familiar with the process conditions of various domestic wafer lines, but also has years of experience in advanced process development in Japan. The application team has more than a decade of IGBT application development experience in central enterprises, with in-depth understanding of the practical application of IGBT in end-use scenarios.

10

More than
10 years of IGBT R&D experience

40

More than
40 technology patents obtained

100

More than
100 IGBT products developed

History
  • ultrahigh-density IGBT, SiC power devices
    2022
  • high-density, high-frequency, high-voltage IGBT
    2020
  • 7th generation IGBT technology released
    2019
  • 600-1700V IGBT series
    2018
  • Chengdu Semi-Future Technology Co., Ltd. established
    2017
  • First customized 1200V/100A IGBT
    2016
  • first Trench-FS IGBT
    2015
  •  first Trench-FS IGBT

    2014
  •  first Planar-FS IGBT
    2013
  • Establish a technical team
    2012
Corporate Culture
A Leader in Power Semiconductors

Corporate Vision

Corporate Vision: Committed to becoming a world-class leader in the power semiconductor industry

Core Values

Profession, Innovation, Integrity, Win-win
Independent Intellectual Property Rights (IIPR)
Semi-Future Technology has a number of core patents, and its self-developed IGBT series chips are at the leading level in China. The Company strictly pursues product design and quality, constantly enriching and improving the product series to provide customers with stable, professional and efficient solutions so as to meet the needs of customers in different fields.
By 2022, our team has applied for more than 30 IGBT-related patents, among which nearly 20 invention patents have been granted.


Partners
Business Distribution
Semi-Future Technology has become a leading supplier of IGBT products and solutions in China,with operations first covering Sichuan and Guangdong, later spreading to Shanghai, Zhejiang, Nanjing, Xi'an, Wuhan and Shandong, and even exported products to South Korea, Japan, Singapore and other countries.